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technische information / technical information igbt-module igbt-modules FP15R12KE3G vorl?ufige daten preliminary data elektrische eigenschaften / electrical properties h?chstzul?ssige werte / maximum rated values diode gleichrichter/ diode rectifier periodische rckw. spitzensperrspannung repetitive peak reverse voltage v rrm 1600 v gleichrichter ausgang grenzeffektivstrom maximum rms current at rectifier output i rmsmax 60 a dauergleichstrom dc forward current t c = 80c i d 15 a sto?strom grenzwert t p = 10 ms, t vj = 25c i fsm 315 a surge forward current t p = 10 ms, t vj = 150c 260 a grenzlastintegral t p = 10 ms, t vj = 25c i 2 t 500 a 2 s i 2 t - value t p = 10 ms, t vj = 150c 340 a 2 s transistor wechselrichter/ transistor inverter kollektor-emitter-sperrspannung collector-emitter voltage v ces 1200 v kollektor-dauergleichstrom tc = 80 c i c,nom. 15 a dc-collector current t c = 25 c i c 25 a periodischer kollektor spitzenstrom repetitive peak collector current t p = 1 ms, t c = 80 c i crm 30 a gesamt-verlustleistung total power dissipation t c = 25c p tot 100 w gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v diode wechselrichter/ diode inverter dauergleichstrom dc forward current tc = 80 c i f 15 a periodischer spitzenstrom repetitive peak forw. current t p = 1 ms i frm 30 a grenzlastintegral i 2 t - value v r = 0v, t p = 10ms, t vj = 125c i 2 t 60 a 2 s transistor brems-chopper/ transistor brake-chopper kollektor-emitter-sperrspannung collector-emitter voltage v ces 1200 v kollektor-dauergleichstrom t c = 80 c i c,nom. 10 a dc-collector current t c = 25 c i c 18 a periodischer kollektor spitzenstrom repetitive peak collector current t p = 1 ms, t c = 80c i crm 20 a gesamt-verlustleistung total power dissipation t c = 25c p tot 80 w gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v diode brems-chopper/ diode brake-chopper dauergleichstrom dc forward current tc = 80 c i f 10 a periodischer spitzenstrom repetitive peak forw. current t p = 1 ms i frm 20 a prepared by: andreas schulz date of publication:10.08.2001 approved by: robert severin revision: 1 1(11) db-pim-igbt3_1.xls
technische information / technical information igbt-module igbt-modules FP15R12KE3G vorl?ufige daten preliminary data modul isolation/ module isolation isolations-prfspannung insulation test voltage rms, f = 50 hz, t = 1 min. ntc connected to baseplate v isol 2,5 kv elektrische eigenschaften / electrical properties charakteristische werte / characteristic values diode gleichrichter/ diode rectifier min. typ. max. durchla?spannung forward voltage t vj = 150c, i f = 15 a v f - 0,95 - v schleusenspannung threshold voltage t vj = 150c v (to) - - 0,8 v ersatzwiderstand slope resistance t vj = 150c r t - - 10,5 m w sperrstrom reverse current t vj = 150c, v r = 1600 v i r - 2 - ma modul leitungswiderstand, anschlsse-chip lead resistance, terminals-chip t c = 25c r aa'+cc' - 5 - m w transistor wechselrichter/ transistor inverter min. typ. max. kollektor-emitter s?ttigungsspannung v ge = 15v, t vj = 25c, i c = 15 a v ce sat - 1,7 2,2 v collector-emitter saturation voltage v ge = 15v, t vj = 125c, i c = 15 a - 2 - v gate-schwellenspannung gate threshold voltage v ce = v ge , t vj = 25c, i c = 0,5 ma v ge(to) 5,0 5,8 6,5 v eingangskapazit?t input capacitance f = 1mhz, t vj = 25c v ce = 25 v, v ge = 0 v c ies - 1,1 - nf kollektor-emitter reststrom collector-emitter cut off current v ge = 0v, t vj = 25c, v ce = 1200 v i ces - - 5 ma gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge =20v, t vj =25c i ges - - 400 na einschaltverz?gerungszeit (ind. last) i c = i nenn , v cc = 600 v turn on delay time (inductive load) v ge = 15v, t vj = 25c, r g = 75 ohm t d,on - 85 - ns v ge = 15v, t vj = 125c, r g = 75 ohm - 90 - ns anstiegszeit (induktive last) i c = i nenn , v cc = 600 v rise time (inductive load) v ge = 15v, t vj = 25c, r g = 75 ohm t r - 30 - ns v ge = 15v, t vj = 125c, r g = 75 ohm - 45 - ns abschaltverz?gerungszeit (ind. last) i c = i nenn , v cc = 600 v turn off delay time (inductive load) v ge = 15v, t vj = 25c, r g = 75 ohm t d,off - 420 - ns v ge = 15v, t vj = 125c, r g = 75 ohm - 520 - ns fallzeit (induktive last) i c = i nenn , v cc = 600 v fall time (inductive load) v ge = 15v, t vj = 25c, r g = 75 ohm t f - 65 - ns v ge = 15v, t vj = 125c, r g = 75 ohm - 90 - ns einschaltverlustenergie pro puls i c = i nenn , v cc = 600 v turn-on energy loss per pulse v ge = 15v, t vj = 125c, r g = 75 ohm e on - 2,1 - mws l s = 45 nh abschaltverlustenergie pro puls i c = i nenn , v cc = 600 v turn-off energy loss per pulse v ge = 15v, t vj = 125c, r g = 75 ohm e off - 1,5 - mws l s = 45 nh kurzschlu?verhalten t p 10s, v ge 15v, r g = 75 ohm sc data t vj 125c, v cc = 720 v i sc - 60 - a 2(11) db-pim-igbt3_1.xls
technische information / technical information igbt-module igbt-modules FP15R12KE3G vorl?ufige daten preliminary data elektrische eigenschaften / electrical properties charakteristische werte / characteristic values min. typ. max. modulinduktivit?t stray inductance module l s ce - - 100 nh modul leitungswiderstand, anschlsse-chip lead resistance, terminals-chip t c = 25c r cc'+ee' - 7 - m w diode wechselrichter/ diode inverter min. typ. max. durchla?spannung v ge = 0v, t vj = 25c, i f = 15 a v f - 1,65 2,2 v forward voltage v ge = 0v, t vj = 125c, i f = 15 a - 1,65 - v rckstromspitze i f =i nenn , - di f /dt = 400 a/s peak reverse recovery current v ge = -10v, t vj = 25c, v r = 600 v i rm - 16 - a v ge = -10v, t vj = 125c, v r = 600 v - 15 - a sperrverz?gerungsladung i f =i nenn , - di f /dt = 400 a/s recovered charge v ge = -10v, t vj = 25c, v r = 600 v q r - 1,8 - as v ge = -10v, t vj = 125c, v r = 600 v - 3 - as abschaltenergie pro puls i f =i nenn , - di f /dt = 400 a/s reverse recovery energy v ge = -10v, t vj = 25c, v r = 600 v e rq - 0,55 - mws v ge = -10v, t vj = 125c, v r = 600 v - 1,1 - mws transistor brems-chopper/ transistor brake-chopper min. typ. max. kollektor-emitter s?ttigungsspannung v ge = 15v, t vj = 25c, i c = 10 a v ce sat - 1,85 2,5 v collector-emitter saturation voltage v ge = 15v, t vj = 125c, i c = 10 a - 2,25 - v gate-schwellenspannung gate threshold voltage v ce = v ge , t vj = 25c, i c = 0,3 ma v ge(to) 5,0 5,8 6,5 v eingangskapazit?t input capacitance f = 1mhz, t vj = 25c v ce = 25 v, v ge = 0 v c ies - 0,6 - nf kollektor-emitter reststrom collector-emitter cut off current v ge = 0v, t vj = 25c, v ce = 1200 v i ces - 5,0 - ma gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25c i ges - - 400 na schaltverluste und -bedingungen switching losses and conditions diode brems-chopper/ diode brake-chopper min. typ. max. durchla?spannung t vj = 25c, i f = 10 a v f - 1,8 2,5 v forward voltage t vj = 125c, i f = 10 a - 1,85 - v schaltverluste und -bedingungen switching losses and conditions ntc-widerstand/ ntc-thermistor min. typ. max. nennwiderstand rated resistance t c = 25c r 25 - 5 - k w abweichung von r 100 deviation of r 100 t c = 100c, r 100 = 493 w d r/r -5 5 % verlustleistung power dissipation t c = 25c p 25 20 mw b-wert b-value r 2 = r 1 exp [b(1/t 2 - 1/t 1 )] b 25/50 3375 k siehe wechselrichter in dbl fp10r12ke3 see inverter in datasheet fp10r12ke3 siehe wechselrichter in dbl fb10r12ke3 see inverter in datasheet fb10r12ke3 3(11) db-pim-igbt3_1.xls
technische information / technical information igbt-module igbt-modules FP15R12KE3G vorl?ufige daten preliminary data thermische eigenschaften / thermal properties min. typ. max. innerer w?rmewiderstand gleichr. diode/ rectif. diode r thjc - - 1 k/w thermal resistance, junction to case trans. wechsr./ trans. inverter - - 1,2 k/w diode wechsr./ diode inverter - - 1,5 k/w trans. bremse/ trans. brake - - 1,5 k/w diode bremse/ diode brake - - 2,3 k/w bergangs-w?rmewiderstand gleichr. diode/ rectif. diode l paste =1w/m*k r thck - 0,08 - k/w thermal resistance, case to heatsink trans. wechsr./ trans. inverter l grease =1w/m*k - 0,04 - k/w diode wechsr./ diode inverter - 0,08 - k/w h?chstzul?ssige sperrschichttemperatur maximum junction temperature t vj - - 150 c betriebstemperatur operation temperature t op -40 - 125 c lagertemperatur storage temperature t stg -40 - 125 c mechanische eigenschaften / mechanical properties innere isolation internal insulation al 2 o 3 cti comperative tracking index 225 anzugsdrehmoment f. mech. befestigung m 3 nm mounting torque 10% gewicht weight g 180 g 4(11) db-pim-igbt3_1.xls
technische information / technical information igbt-module igbt-modules FP15R12KE3G vorl?ufige daten preliminary data i c [a] v ce [v] i c [a] v ce [v] ausgangskennlinienfeld wechselr. (typisch) i c = f (v ce ) output characteristic inverter (typical) v ge = 15 v 0 5 10 15 20 25 30 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 tvj = 25c tvj = 125c 0 5 10 15 20 25 30 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 vge=19v vge=17v vge=15v vge=13v vge=11v vge=9v ausgangskennlinienfeld wechselr. (typisch) i c = f (v ce ) output characteristic inverter (typical) t vj = 125c 5(11) db-pim-igbt3_1.xls
technische information / technical information igbt-module igbt-modules FP15R12KE3G vorl?ufige daten preliminary data i c [a] v ge [v] i f [a] v f [v] durchla?kennlinie der freilaufdiode wechselr. (typisch) i f = f (v f ) forward characteristic of fwd inverter (typical) 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 tj=25c tj=125c bertragungscharakteristik wechselr. (typisch) i c = f (v ge ) transfer characteristic inverter (typical) v ce = 20 v 0 5 10 15 20 25 30 0 0,5 1 1,5 2 2,5 3 tj = 25c tj = 125c 6(11) db-pim-igbt3_1.xls
technische information / technical information igbt-module igbt-modules FP15R12KE3G vorl?ufige daten preliminary data 600 v 75 ohm e [mws] i c [a] 600 v e [mws] r g [ w ] schaltverluste wechselr. (typisch) e on = f (i c ), e off = f (i c ), e rec = f (i c ) v cc = switching losses inverter (typical) t j = 125c, v ge = 15 v, r gon = r goff = 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 35 eon eoff erec 0 0,5 1 1,5 2 2,5 3 0 20 40 60 80 100 120 140 eon eoff erec schaltverluste wechselr. (typisch) e on = f (r g ), e off = f (r g ), e rec = f (r g ) switching losses inverter (typical) t j = 125c, v ge = +-15 v , i c = i nenn , v cc = 7(11) db-pim-igbt3_1.xls
technische information / technical information igbt-module igbt-modules FP15R12KE3G vorl?ufige daten preliminary data z thjc [k/w] t [s] i c [a] v ce [v] transienter w?rmewiderstand wechselr. z thjc = f (t) transient thermal impedance inverter 0,01 0,1 1 10 0,001 0,01 0,1 1 10 zth-igbt zth-fwd sicherer arbeitsbereich wechselr. (rbsoa) i c = f (v ce ) reverse bias save operating area inverter (rbsoa) t vj = 125c, v ge = 15v 0 5 10 15 20 25 30 35 0 200 400 600 800 1000 1200 1400 ic,modul ic,chip 8(11) db-pim-igbt3_1.xls
technische information / technical information igbt-module igbt-modules FP15R12KE3G vorl?ufige daten preliminary data i c [a] v ce [v] i f [a] v f [v] 0 2 4 6 8 10 12 14 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 tvj = 25c tvj = 125c durchla?kennlinie der brems-chopper-diode (typisch) i f = f (v f ) forward characteristic of brake-chopper-fwd (typical) ausgangskennlinienfeld brems-chopper-igbt (typisch) i c = f (v ce ) output characteristic brake-chopper-igbt (typical) v ge = 15 v 0 2 4 6 8 10 12 14 0 0,5 1 1,5 2 2,5 3 3,5 4 tj = 25c tj = 125c 9(11) db-pim-igbt3_1.xls
technische information / technical information igbt-module igbt-modules FP15R12KE3G vorl?ufige daten preliminary data i f [a] v f [v] r[ w ] t c [c] durchla?kennlinie der gleichrichterdiode (typisch) i f = f (v f ) forward characteristic of rectifier diode (typical) 0 5 10 15 20 25 30 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 tj = 25c tj = 150c ntc- temperaturkennlinie (typisch) r = f (t) ntc- temperature characteristic (typical) rtyp 100 1000 10000 100000 0 20 40 60 80 100 120 140 160 10(11) db-pim-igbt3_1.xls
technische information / technical information igbt-module igbt-modules FP15R12KE3G vorl?ufige daten preliminary data schaltplan/ circuit diagram geh?useabmessungen/ package outlines mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. 2 3 1 21 23 22 24 20 19 13 4 16 15 11 18 17 12 5 6 10 7 14 ntc 9 8 11(11) db-pim-igbt3_1.xls

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